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| BC847PN BC847PN NPN PNP Complementary Surface Mount General Purpose Si-Planar Transistors Komplementare Si-Planar Transistoren fur die Oberflachenmontage NPN PNP 300 mW SOT-363 0.01 g Version 2006-09-05 20.1 2 x 0.65 6 5 4 0.90.1 1.250.1 2.10.1 Power dissipation Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 2 3 2.4 Dimensions - Mae [mm] 6 = C1 5 = B2 4 = E2 1 = E1 2 = B1 3 = C2 Maximum ratings (TA = 25C) per transistor - pro Transistor Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCBO VCEO VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25C) BC847PN 45 V 50 V 6V 300 mW 1) 100 mA 200 mA 200 mA -55...+150C -55...+150C Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 5 V, IC = 2 mA - VCE = 5 V, - IC = 2 mA IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA T1 - NPN T2 - PNP hFE hFE VCEsat VCEsat - VCEsat - VCEsat 200 220 - - - - Kennwerte (Tj = 25C) Typ. - - - - - - Max. 450 475 250 mV 600 mV 300 mV 650 mV Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) T1 - NPN T2 - PNP 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BC847PN Characteristics (Tj = 25C) Min. Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V - IC = 2 mA, - VCE = 5 V - IC = 10 mA, - VCE = 5 V VCB = 30 V, (E open) - VCB = 30 V, (E open) Emitter-Base cutoff current VEB = 5 V, (C open) - VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz - VCE = 5 V, - IC = 10 mA, f = 100 MHz VCB = 10 V, IE =ie = 0, f = 1 MHz - VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Pinning - Anschlussbelegung T1: E1 = 1, C1 = 6, B1 = 2 T2: E2 = 4, C2 = 3, B2 = 5 1 T1 Kennwerte (Tj = 25C) Typ. 700 mV 900 mV 700 mV - - - - - - - - - - - - - < 420 K/W 1) 6 5 4 T2 Max. - - - 950 mV 700 mV 720 mV 750 mV 820 mV 15 nA 15 nA 100 nA 100 nA - - 6 pF 4.5 pF T1 - NPN T2 - PNP VBEsat VBEsat - VBEsat - VBEsat VBE VBE - VBE - VBE ICB0 - ICB0 IEB0 - IEB0 fT fT CCBO CCBO RthA - - - - 580 mV - 600 mV - - - - - 100 MHz 100 MHz - - T1 - NPN T2 - PNP Collector-Base cutoff current - Kollektor-Basis-Reststrom T1 - NPN T2 - PNP T1 - NPN T2 - PNP T1 - NPN T2 - PNP T1 - NPN T2 - PNP Collector-Base Capacitance - Kollektor-Basis-Kapazitat 2 3 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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